| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±30 | |
| 48 | |
| 50@10V | |
| 60@10V | |
| 60 | |
| 3000@25V | |
| 250000 | |
| 28 | |
| 26 | |
| 46 | |
| 20 | |
| -55 | |
| 175 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.15(Max) |
| Verpackungsbreite | 4.83(Max) |
| Verpackungslänge | 10.66(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 |
Looking for a component that can both amplify and switch between signals within your circuit? The IXTP48N20T power MOSFET from Ixys Corporation provides the solution. Its maximum power dissipation is 250000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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