| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Depletion | |
| N | |
| 1 | |
| 500 | |
| ±20 | |
| 550@0V | |
| 96@5V | |
| 2800@25V | |
| 300000 | |
| 43 | |
| 72 | |
| 82 | |
| 28 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.15(Max) |
| Verpackungsbreite | 4.83(Max) |
| Verpackungslänge | 10.66(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 |
Amplify electronic signals and switch between them with the help of Ixys Corporation's IXTP6N50D2 power MOSFET. Its maximum power dissipation is 300000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
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