| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 80 | |
| 14@10V | |
| 60@10V | |
| 60 | |
| 3040@25V | |
| 230000 | |
| 48 | |
| 54 | |
| 40 | |
| 31 | |
| -55 | |
| 175 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.15(Max) |
| Verpackungsbreite | 4.83(Max) |
| Verpackungslänge | 10.66(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 |
Thanks to Ixys Corporation, both your amplification and switching needs can be taken care of with one component: the IXTP80N10T power MOSFET. Its maximum power dissipation is 230000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
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