| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 22 | |
| 270@10V | |
| 50@10V | |
| 50 | |
| 2880@25V | |
| 350000 | |
| 21 | |
| 25 | |
| 72 | |
| 22 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungsbreite | 4.9(Max) |
| Verpackungslänge | 15.8(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3P |
| 3 | |
| Leitungsform | Through Hole |
Increase the current or voltage in your circuit with this IXTQ22N50P power MOSFET from Ixys Corporation. Its maximum power dissipation is 350000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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