| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 36 | |
| 170@10V | |
| 85@10V | |
| 85 | |
| 5500@25V | |
| 540000 | |
| 21 | |
| 27 | |
| 75 | |
| 25 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungsbreite | 4.9(Max) |
| Verpackungslänge | 15.8(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3P |
| 3 | |
| Leitungsform | Through Hole |
If you need to either amplify or switch between signals in your design, then Ixys Corporation's IXTQ36N50P power MOSFET is for you. Its maximum power dissipation is 540000 mW. This device utilizes polarhv technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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