| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 24 | |
| 270@10V | |
| 48@10V | |
| 48 | |
| 2890@25V | |
| 480000 | |
| 5 | |
| 9 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungsbreite | 4.9(Max) |
| Verpackungslänge | 15.8(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3P |
| 3 |
Create an effective common drain amplifier using this IXTQ460P2 power MOSFET from Ixys Corporation. Its maximum power dissipation is 480000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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