| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 100 | |
| ±20 | |
| 52 | |
| 50@10V | |
| 60@10V | |
| 60 | |
| 2845@25V | |
| 300000 | |
| 22 | |
| 29 | |
| 38 | |
| 22 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungsbreite | 4.9(Max) mm |
| Verpackungslänge | 15.8(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3P |
| 3 |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Ixys Corporation's IXTQ52P10P power MOSFET can provide a solution. Its maximum power dissipation is 300000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
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