| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 4.5 | |
| 110 | |
| 100 | |
| 5 | |
| 18@10V | |
| 260@10V | |
| 260 | |
| 10500@25V | |
| 600000 | |
| 24 | |
| 130 | |
| 99 | |
| 28 | |
| -55 | |
| 150 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 5.1(Max) mm |
| Verpackungsbreite | 14(Max) mm |
| Verpackungslänge | 16.05(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-268 |
| 3 |
Thanks to Ixys Corporation, both your amplification and switching needs can be taken care of with one component: the IXTT110N10L2 power MOSFET. Its maximum power dissipation is 600000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
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