| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 75 | |
| 21@10V | |
| 215@10V | |
| 215 | |
| 8100@25V | |
| 400000 | |
| 15 | |
| 14 | |
| 68 | |
| 23 | |
| -55 | |
| 150 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 5.1(Max) |
| Verpackungsbreite | 14(Max) |
| Verpackungslänge | 16.05(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-268 |
| 3 |
This IXTT75N10L2 power MOSFET from Ixys Corporation can be used for amplification in your circuit. Its maximum power dissipation is 400000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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