| Compliant with Exemption | |
| EAR99 | |
| Active | |
| EA | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 200 | |
| ±20 | |
| 90 | |
| 44@10V | |
| 205@10V | |
| 205 | |
| 12000@25V | |
| 890000 | |
| 28 | |
| 60 | |
| 89 | |
| 32 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.34(Max) mm |
| Verpackungsbreite | 5.21(Max) mm |
| Verpackungslänge | 16.13(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Lieferantenverpackung | PLUS 247 |
| 3 |
If you need to either amplify or switch between signals in your design, then Ixys Corporation's IXTX90P20P power MOSFET is for you. Its maximum power dissipation is 890000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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