Reduced Price
IXYSIXTY1R4N60PMOSFETs
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) TO-252AA
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 1.4 | |
| 9000@10V | |
| 5.2@10V | |
| 5.2 | |
| 140@25V | |
| 50000 | |
| 16 | |
| 16 | |
| 25 | |
| 10 | |
| -55 | |
| 150 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.38(Max) mm |
| Verpackungsbreite | 6.22(Max) mm |
| Verpackungslänge | 6.73(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-252AA |
| 3 |
Compared to traditional transistors, IXTY1R4N60P power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 50000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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