| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 100 | |
| ±15 | |
| 4.5 | |
| 26 | |
| 50 | |
| 10 | |
| 90@10V | |
| 52@10V | |
| 52 | |
| 3820@25V | |
| 150000 | |
| 11 | |
| 15 | |
| 37 | |
| 20 | |
| -55 | |
| 150 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.4(Max) mm |
| Verpackungsbreite | 6.22(Max) mm |
| Verpackungslänge | 6.73(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 |
Make an effective common gate amplifier using this IXTY26P10T power MOSFET from Ixys Corporation. Its maximum power dissipation is 150000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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