| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Trench | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 4.5 | |
| -55 to 175 | |
| 44 | |
| 100 | |
| 1 | |
| 30@10V | |
| 27.4@10V | |
| 27.4 | |
| 9 | |
| 8.8 | |
| 144 | |
| 1567@25V | |
| 47@25V | |
| 2.5 | |
| 200 | |
| 130000 | |
| 32 | |
| 47 | |
| 36 | |
| 21 | |
| -55 | |
| 175 | |
| 110 | |
| 5 | |
| 60 | |
| 1.1 | |
| 20 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.38(Max) |
| Verpackungsbreite | 6.22(Max) |
| Verpackungslänge | 6.73(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-252 |
| 3 |
Create an effective common drain amplifier using this IXTY44N10T power MOSFET from Ixys Corporation. Its maximum power dissipation is 130000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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