IXYSIXXH50N60B3D1IGBT-Chip
Trans IGBT Chip N-CH 600V 120A 600W 3-Pin(3+Tab) TO-247AD
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| XPT | |
| N | |
| Single | |
| ±20 | |
| 600 | |
| 1.55 | |
| 120 | |
| 0.1 | |
| 600 | |
| -55 | |
| 175 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.46(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 16.26(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247AD |
| 3 |
This fast-switching IXXH50N60B3D1 IGBT transistor from Ixys Corporation will be perfect in your circuit. Its maximum power dissipation is 600000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes xpt technology.
| EDA / CAD Models |
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