| Compliant with Exemption | |
| Active | |
| Automotive | No |
| PPAP | No |
| 600 | |
| Befestigung | Screw |
| Verpackungshöhe | 9.6(Max) |
| Verpackungsbreite | 25.42(Max) |
| Verpackungslänge | 38.23(Max) |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-227B |
| 4 |
This powerful and secure IXXN200N60C3H1 IGBT transistor from Ixys Corporation will make sure your circuit works properly. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 780000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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