IXYSIXYH40N90C3D1IGBT-Chip
Trans IGBT Chip N-CH 900V 90A 500W 3-Pin(3+Tab) TO-247AD
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| XPT | |
| N | |
| Single | |
| ±20 | |
| 900 | |
| 2.2 | |
| 90 | |
| 0.1 | |
| 500 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.46(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 16.26(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247AD |
| 3 |
This IXYH40N90C3D1 IGBT transistor from Ixys Corporation will work perfectly in your circuit. It has a maximum collector emitter voltage of 900 V. Its maximum power dissipation is 500000 mW. It is made in a single configuration. This device is made with xpt technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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