| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| XPT | |
| N | |
| Single Dual Emitter | |
| ±20 | |
| 1200 | |
| 2.96 | |
| 140 | |
| 0.1 | |
| 690 | |
| -55 | |
| 150 | |
| Befestigung | Screw |
| Verpackungsbreite | 25.5(Max) |
| Verpackungslänge | 38.3(Max) |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-227B |
| 4 | |
| Leitungsform | Screw |
Don't be afraid to step up the amps in your device when using this IXYN100N120C3H1 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 690000 mW. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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