Semicoa SemiconductorsJANSR2N3700UBGP BJT
Trans GP BJT NPN 80V 1A 500mW 4-Pin Case UB
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 140 | |
| 80 | |
| 7 | |
| -65 to 200 | |
| 1.1@15mA@150mA | |
| 0.2@15mA@150mA|0.5@50mA@500mA | |
| 1 | |
| 50@0.1mA@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V | |
| 500 | |
| -65 | |
| 200 | |
| Military | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.42(Max) mm |
| Verpackungsbreite | 2.74(Max) mm |
| Verpackungslänge | 3.25(Max) mm |
| Leiterplatte geändert | 4 |
| Lieferantenverpackung | Case UB |
| 4 |
Semicoa Semiconductors brings you the solution to your high-voltage BJT needs with their NPN JANSR2N3700UB general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 500 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |
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