Semicoa SemiconductorsJANTX2N2222AGP BJT
Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18 Bag
| Not Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 75 | |
| 50 | |
| 6 | |
| -65 to 200 | |
| 2@50mA@500mA|1.2@15mA@150mA | |
| 1@50mA@500mA|0.3@15mA@150mA | |
| 0.8 | |
| 10000 | |
| 30@500mA@10V|100@150mA@10V|100@10mA@10V|75@1mA@10V|50@0.1mA@10V | |
| 500 | |
| -65 | |
| 200 | |
| Bag | |
| Military | |
| Durchmesser | 5.84(Max) |
| Befestigung | Through Hole |
| Verpackungshöhe | 5.33(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-18 |
| 3 | |
| Leitungsform | Through Hole |
This NPN JANTX2N2222A general purpose bipolar junction transistor from Semicoa Semiconductors is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
| EDA / CAD Models |
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