| Not Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 40 | |
| 15 | |
| 4.5 | |
| 0.85@1mA@10mA|0.9@3mA@30mA|1.2@10mA@100mA | |
| 0.2@1mA@10mA|0.25@3mA@30mA|0.45@10mA@100mA | |
| 40@10mA@0.35V|40@10mA@1V|30@30mA@0.4V|20@100mA@1V | |
| 360 | |
| -65 | |
| 200 | |
| Military | |
| Durchmesser | 5.84(Max) |
| Befestigung | Through Hole |
| Verpackungshöhe | 5.33(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-18 |
| 3 | |
| Leitungsform | Through Hole |
If you require a general purpose BJT that can handle high voltages, then the NPN JANTX2N2369A BJT, developed by Semicoa Semiconductors, is for you. This bipolar junction transistor's maximum emitter base voltage is 4.5 V. Its maximum power dissipation is 360 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 15 V and a maximum emitter base voltage of 4.5 V.
| EDA / CAD Models |
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