Semicoa SemiconductorsJANTXV2N2219AGP BJT
Trans GP BJT NPN 50V 0.8A 800mW 3-Pin TO-39
| Not Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 75 | |
| 50 | |
| 6 | |
| 1.2@15mA@150mA|2@50mA@500mA | |
| 0.3@15mA@150mA|1@50mA@500mA | |
| 0.8 | |
| 30@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V | |
| 800 | |
| -55 | |
| 200 | |
| Military | |
| Befestigung | Through Hole |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-39 |
| 3 | |
| Leitungsform | Through Hole |
Semicoa Semiconductors has the solution to your circuit's high-voltage requirements with their NPN JANTXV2N2219A general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 800 mW. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C.
| EDA / CAD Models |
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