| Not Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 140 | |
| 80 | |
| 7 | |
| 1.1@15mA@150mA | |
| 0.2@15mA@150mA|0.5@50mA@500mA | |
| 1 | |
| 100@150mA@10V|50@1mA@10V|90@10mA@10V|50@500mA@10V|15@1A@10V | |
| 500 | |
| -65 | |
| 200 | |
| Military | |
| Durchmesser | 5.84(Max) |
| Befestigung | Through Hole |
| Verpackungshöhe | 5.33(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-18 |
| 3 | |
| Leitungsform | Through Hole |
The NPN JANTXV2N3700 general purpose bipolar junction transistor, developed by Semicoa Semiconductors, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
| EDA / CAD Models |
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