| Supplier Unconfirmed | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | Unknown |
| PPAP | Unknown |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 80 | |
| 80 | |
| 7 | |
| 0.6@1.25mA@1A|0.4@25mA@250mA | |
| 4 | |
| 40@100mA@1V|30@250mA@1V|20@500mA@1V|10@1A@1V|3@4A@5V | |
| 3000 | |
| -65 | |
| 200 | |
| Military | |
| Befestigung | Through Hole |
| Verpackungshöhe | 8.64(Max) |
| Verpackungsbreite | 17.78 |
| Verpackungslänge | 24.43(Max) + 7.36 |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-66 |
| 3 | |
| Leitungsform | Through Hole |
The PNP JANTXV2N3741 general purpose bipolar junction transistor, developed by Aeroflex , is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |
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