STMicroelectronicsL6385EDGate- und Leistungstreibern
Driver 600V 2-OUT High Side/Low Side Half Brdg Non-Inv 8-Pin SO N Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8542.39.00.90 | |
| Automotive | No |
| PPAP | No |
| High Side|Low Side | |
| Non-Inverting | |
| Half Bridge | |
| 2 | |
| Independent | |
| IGBT|MOSFET | |
| 2 | |
| 50(Typ) | |
| 30(Typ) | |
| 400 | |
| 110(Typ) | |
| CMOS|TTL | |
| 17 | |
| 8.3 | |
| 9.6 | |
| 600 | |
| 750 | |
| -45 | |
| 125 | |
| Synchronous|Undervoltage Lockout | |
| Tube | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.65(Max) |
| Verpackungsbreite | 4(Max) |
| Verpackungslänge | 5(Max) |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SO N |
| 8 | |
| Leitungsform | Gull-wing |
Switch between states in a high power transistor by using this L6385ED power driver developed by STMicroelectronics. This device has a maximum propagation delay time of 110(typ) ns and a maximum power dissipation of 750 mW. Its maximum power dissipation is 750 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This gate driver has an operating temperature range of -45 °C to 125 °C. This device has a maximum of 17 V.
| EDA / CAD Models |
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