| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Depletion | |
| N | |
| 1 | |
| 500(Min) | |
| ±20 | |
| 0.03 | |
| 1000000@0V | |
| 7.5@25V | |
| 740 | |
| 1300 | |
| 450 | |
| 100 | |
| 90 | |
| -55 | |
| 150 | |
| Bag | |
| Befestigung | Through Hole |
| Verpackungshöhe | 5.33(Max) |
| Verpackungsbreite | 4.19(Max) |
| Verpackungslänge | 5.21(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-92 |
| 3 |
Thanks to Microchip Technology, both your amplification and switching needs can be taken care of with one component: the LND150N3-G power MOSFET. Its maximum power dissipation is 740 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes dmos technology. This N channel MOSFET transistor operates in depletion mode.
| EDA / CAD Models |
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