Microchip TechnologyLP0701LG-GMOSFETs
Trans MOSFET P-CH Si 16.5V 0.7A 8-Pin SOIC N T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 16.5 | |
| ±10 | |
| 1 | |
| 0.7 | |
| 1500@5V | |
| 120@15V | |
| 100 | |
| 1500 | |
| 30(Max) | |
| 20(Max) | |
| 30(Max) | |
| 20(Max) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 2000@2V|1700@3V|1300@5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.65(Max) |
| Verpackungsbreite | 3.9 |
| Verpackungslänge | 4.9 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC N |
| 8 | |
| Leitungsform | Gull-wing |
This LP0701LG-G power MOSFET from Microchip Technology can be used for amplification in your circuit. Its maximum power dissipation is 1500 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.