| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Dual | |
| Enhancement | |
| N | |
| 2 | |
| 30 | |
| ±10 | |
| 0.35 | |
| 10000 | |
| 1 | |
| 3700@4V | |
| 1.58@10V | |
| 1.58 | |
| 7@10V | |
| 800 | |
| 120 | |
| 65 | |
| 155 | |
| 19 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.88(Max) mm |
| Verpackungsbreite | 1.6 mm |
| Verpackungslänge | 2 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | MCPH |
| 6 | |
| Leitungsform | Flat |
Create an effective common drain amplifier using this MCH6602-TL-E power MOSFET from ON Semiconductor. Its maximum power dissipation is 800 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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