MagnaChip SemiconductorMDD1501RHMOSFETs
Trans MOSFET N-CH 30V 25.1A 3-Pin(2+Tab) DPAK T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.7 | |
| 25.1 | |
| 100 | |
| 1 | |
| 5.6@10V | |
| 10.1@4.5V|20.7@10V | |
| 20.7 | |
| 1350@15V | |
| 6200 | |
| 8.6 | |
| 12.2 | |
| 29.5 | |
| 8.8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.39(Max) mm |
| Verpackungsbreite | 6.1 mm |
| Verpackungslänge | 6.73(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
Make an effective common gate amplifier using this MDD1501RH power MOSFET from MagnaChip Semiconductor. Its maximum power dissipation is 6200 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with tmos technology.
| EDA / CAD Models |
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