Reduced Price
MagnaChip SemiconductorMDD1951RHMOSFETs
Trans MOSFET N-CH 60V 4.4A 3-Pin(2+Tab) DPAK T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 3 | |
| 4.4 | |
| 100 | |
| 1 | |
| 45@10V | |
| 4.8@4.5V | |
| 470@30V | |
| 2000 | |
| 7.6 | |
| 15.2 | |
| 21.2 | |
| 7.4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.3 mm |
| Verpackungsbreite | 6.1 mm |
| Verpackungslänge | 6.6 mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? MagnaChip Semiconductor's MDD1951RH power MOSFET can provide a solution. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes tmos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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