MagnaChip SemiconductorMDF1903THMOSFETs
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220F Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3 | |
| 12 | |
| 100 | |
| 1 | |
| 110@10V | |
| 8.8@10V | |
| 8.8 | |
| 475@25V | |
| 33800 | |
| 5.5 | |
| 10.6 | |
| 16.2 | |
| 6.8 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 15.2(Max) mm |
| Verpackungsbreite | 4.7(Max) mm |
| Verpackungslänge | 10.36(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220F |
| 3 | |
| Leitungsform | Through Hole |
Compared to traditional transistors, MDF1903TH power MOSFETs, developed by MagnaChip Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 33800 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with tmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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