MagnaChip SemiconductorMDF9N50BTHMOSFETs
Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220F Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 4 | |
| 9 | |
| 100 | |
| 1 | |
| 850@10V | |
| 15.7@10V | |
| 15.7 | |
| 792@25V | |
| 38000 | |
| 37.3 | |
| 27.3 | |
| 68 | |
| 14.1 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 16.13(Max) |
| Verpackungsbreite | 4.93(Max) |
| Verpackungslänge | 10.71(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220F |
| 3 | |
| Leitungsform | Through Hole |
If you need to either amplify or switch between signals in your design, then MagnaChip Semiconductor's MDF9N50BTH power MOSFET is for you. Its maximum power dissipation is 38000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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