| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| TMOS | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±25 | |
| 3 | |
| 11 | |
| 100 | |
| 1 | |
| 10@20V | |
| 30.5@10V | |
| 30.5 | |
| 1433@15V | |
| 2500 | |
| 34.6 | |
| 12.9 | |
| 50.6 | |
| 15.2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.38 mm |
| Verpackungsbreite | 3.9 mm |
| Verpackungslänge | 4.9 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC |
| 8 | |
| Leitungsform | Gull-wing |
Use MagnaChip Semiconductor's MDS3604URH power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 2500 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with tmos technology.
| EDA / CAD Models |
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