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MagnaChip SemiconductorMDS9651URHMOSFETs
Trans MOSFET N/P-CH 30V 6.9A/6A 8-Pin SOIC T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Dual Dual Drain | |
| TMOS | |
| Enhancement | |
| N|P | |
| 2 | |
| 30 | |
| ±20 | |
| 3 | |
| 6.9@N Channel|6@P Channel | |
| 100 | |
| 1 | |
| 28@10V@N Channel|35@10V@P Channel | |
| 6.94@10V@N Channel|18.4@10V@P Channel | |
| 6.94@N Channel|18.4@P Channel | |
| 334@15V@N Channel|874@15V@P Channel | |
| 2000 | |
| 10.5@N Channel|8.6@P Channel | |
| 25.4@N Channel|29.8@P Channel | |
| 14.2@N Channel|26.3@P Channel | |
| 3.5@N Channel|9.8@P Channel | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.38 mm |
| Verpackungsbreite | 3.9 mm |
| Verpackungslänge | 4.9 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC |
| 8 | |
| Leitungsform | Gull-wing |
Use MagnaChip Semiconductor's MDS9651URH power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N|P channel MOSFET transistor operates in enhancement mode. This device is made with tmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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