MagnaChip SemiconductorMDU1513URHMOSFETs
Trans MOSFET N-CH 30V 26.1A 8-Pin DFN EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.7 | |
| 26.1 | |
| 100 | |
| 1 | |
| 4.6@10V | |
| 12.9@4.5V|27@10V | |
| 27 | |
| 1726@15V | |
| 5500 | |
| 9.5 | |
| 12.1 | |
| 33.5 | |
| 9.9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.1(Max) mm |
| Verpackungsbreite | 6.1(Max) mm |
| Verpackungslänge | 5.1(Max) mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | DFN EP |
| 8 | |
| Leitungsform | No Lead |
Make an effective common source amplifier using this MDU1513URH power MOSFET from MagnaChip Semiconductor. Its maximum power dissipation is 5500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with tmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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