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MagnaChip SemiconductorMDV5524URHMOSFETs
Trans MOSFET N-CH 30V 8.5A/9.9A 8-Pin Power DFN EP T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| N | |
| 2 | |
| 30 | |
| ±20 | |
| 2.4@FET 1|2@FET 2 | |
| 8.5@FET 1|9.9@FET 2 | |
| 100 | |
| 1 | |
| 14.4@10V@FET 1|12.6@10V@FET 2 | |
| 3.6@4.5V|7.2@10V@FET 1|8.1@4.5V|18@10V@FET 2 | |
| 7.2@FET 1|18@FET 2 | |
| 386@15V@FET 1|1037@15V@FET 2 | |
| 1800@FET 1|2100@FET 2 | |
| 6.5@FET 1|7.1@FET 2 | |
| 10.2@FET 1|10.4@FET 2 | |
| 17.3@FET 1|41.8@FET 2 | |
| 6.7@FET 1|9.3@FET 2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75(Max) |
| Verpackungsbreite | 3 |
| Verpackungslänge | 3 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | Power DFN EP |
| 8 |
Use MagnaChip Semiconductor's MDV5524URH power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 1800@FET 1|2100@FET 2 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device is made with tmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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