| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.8um to 3um | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±20 | |
| 2.4 | |
| -55 to 150 | |
| 0.75 | |
| 100 | |
| 1 | |
| 90@10V | |
| 6 | |
| 3.2 | |
| 125@5V | |
| 45@5V | |
| 1 | |
| 120 | |
| 400 | |
| 8 | |
| 1 | |
| 16 | |
| 2.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 20 | |
| 2 | |
| 0.8 | |
| 1.7 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.94 mm |
| Verpackungsbreite | 1.3 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The MGSF1N02LT1G power MOSFET from ON Semiconductor provides the solution. Its maximum power dissipation is 400 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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