onsemiMJ11016GDarlington BJT
Trans Darlington NPN 120V 30A 200000mW 3-Pin(2+Tab) TO-3 Tray
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 120 | |
| 120 | |
| 5 | |
| 3.5@200mA@20A|5@300mA@30A | |
| 30 | |
| 4(Min) | |
| 3@200mA@20A|4@300mA@30A | |
| 1000@20A@5V|200@30A@5V | |
| 200000 | |
| -55 | |
| 200 | |
| Tray | |
| Befestigung | Through Hole |
| Verpackungshöhe | 8.51(Max) |
| Verpackungsbreite | 26.67(Max) |
| Verpackungslänge | 39.37 |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3 |
| 3 | |
| Leitungsform | Through Hole |
This NPN MJ11016G Darlington transistor from ON Semiconductor amplifies your current and yields a much higher current gain than other transistors. This product's maximum continuous DC collector current is 30 A, while its minimum DC current gain is 1000@20A@5 V|200@30A@5V. It has a maximum collector emitter saturation voltage of 3@200mA@20A|4@300mA@30A V. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 3.5@200mA@20A|5@300mA@30A V. Its maximum power dissipation is 200000 mW. The component will be shipped in tray format. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 200 °C.
| EDA / CAD Models |
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