STMicroelectronicsMJD112T4Darlington BJT
Trans Darlington NPN 100V 2A 20000mW 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 100 | |
| 100 | |
| 5 | |
| 4@40mA@4A | |
| 2 | |
| 20 | |
| 150 | |
| 25(Min) | |
| 2@8mA@2A|3@40mA@4A | |
| 1000@2A@3V|200@4A@3V|500@500mA@3V | |
| 20000 | |
| -65 | |
| 150 | |
| Industrial | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.4(Max) |
| Verpackungsbreite | 6.2(Max) |
| Verpackungslänge | 6.6(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
With one of these NPN MJD112T4 Darlington transistors from STMicroelectronics, you'll be able to process much higher current gain values within your circuit. This product's maximum continuous DC collector current is 2 A, while its minimum DC current gain is 1000@2A@3 V|200@4A@3V|500@500mA@3V. It has a maximum collector emitter saturation voltage of 2@8mA@2A|3@40mA@4A V. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@40mA@4A V. Its maximum power dissipation is 20000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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