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onsemiMJD122T4GDarlington BJT
Trans Darlington NPN 100V 8A 1750mW 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 12000@4A@4V | |
| 100 | |
| 4(Min) | |
| 100 | |
| 5 | |
| 4.5@80mA@8A | |
| 8 | |
| 10 | |
| 0.12 | |
| -65 to 150 | |
| 4(Min) | |
| 4@80mA@8A|2@16mA@4A | |
| 100@8A@4V|1000@4A@4V | |
| 1750 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| 500 to 3600|<500 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.28 mm |
| Verpackungsbreite | 6.1 mm |
| Verpackungslänge | 6.54 mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
Amplify your current using ON Semiconductor's NPN MJD122T4G Darlington transistor in order to yield a higher current gain. This product's maximum continuous DC collector current is 8 A, while its minimum DC current gain is 1000@4A@4 V|100@8A@4V. It has a maximum collector emitter saturation voltage of 2@16mA@4A|4@80mA@8A V. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4.5@80mA@8A V. Its maximum power dissipation is 1750 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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