| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 60 | |
| 40 | |
| 7 | |
| -65 to 150 | |
| 1 | |
| 1.5@150mA@1.5A|2@600mA@3A | |
| 0.3@50mA@500mA|0.9@150mA@1.5A|1.7@600mA@3A | |
| 3 | |
| 100 | |
| 50@100mA@1V|30@500mA@1V|12@1.5A@1V | |
| 1500 | |
| -65 | |
| 150 | |
| Box | |
| Befestigung | Through Hole |
| Verpackungshöhe | 11.1(Max) |
| Verpackungsbreite | 3(Max) |
| Verpackungslänge | 7.8(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-225 |
| 3 | |
| Leitungsform | Through Hole |
Jump-start your electronic circuit design with this versatile NPN MJE180G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 12500 mW. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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