| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 40 | |
| 25 | |
| 8 | |
| -65 to 150 | |
| 1 | |
| 2.5@1A@5A | |
| 0.3@50mA@500mA|0.75@200mA@2A|1.8@1A@5A | |
| 5 | |
| 100 | |
| 70@500mA@1V|45@2A@1V|10@5A@2V | |
| 15000 | |
| -65 | |
| 150 | |
| Box | |
| Befestigung | Through Hole |
| Verpackungshöhe | 11.1(Max) |
| Verpackungsbreite | 3(Max) |
| Verpackungslänge | 7.8(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-225 |
| 3 | |
| Leitungsform | Through Hole |
Compared to other transistors, the NPN MJE200G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 8 V. Its maximum power dissipation is 15000 mW. This product comes packaged in bulk, so the parts will be stored loosely. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 8 V.
| EDA / CAD Models |
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