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onsemiMJE340GGP BJT
Trans GP BJT NPN 300V 0.5A 20000mW 3-Pin(3+Tab) TO-225 Box
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 300 | |
| 3 | |
| -65 to 150 | |
| 0.5 | |
| 100000 | |
| 30@50mA@10V | |
| 20000 | |
| -65 | |
| 150 | |
| Box | |
| Befestigung | Through Hole |
| Verpackungshöhe | 10.85 |
| Verpackungsbreite | 2.7 |
| Verpackungslänge | 7.6 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-225 |
| 3 | |
| Leitungsform | Through Hole |
The NPN MJE340G general purpose bipolar junction transistor, developed by ON Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 3 V. Its maximum power dissipation is 20000 mW. This product comes packaged in bulk, so the parts will be stored loosely. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 3 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
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