| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 400 | |
| 250 | |
| 5 | |
| 1@0.8A@8A|3@3.2A@16A | |
| 16 | |
| 20@8A@5V | |
| 200000 | |
| -65 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.08(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 16.26(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
Add switching and amplifying capabilities to your electronic circuit with this PNP MJW21195G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 200000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 250 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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