onsemiMMBFJ309LT1GHF-MOSFETs

Trans RF FET N-CH 25V 3-Pin SOT-23 T/R

The unique design of this MMBFJ309LT1G JFET from ON Semiconductor gives it the versatility to be used as an electrical switch, amplifier, or voltage-controlled resistor in your electronic circuit design. Its maximum power dissipation is 225 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a single configuration. This junction field effect transistor has an operating temperature range of -55 °C to 150 °C.

Import TariffMay apply to this part

7.700 Stück: morgen versandbereit

    Total0,17 €Price for 1

    • Service Fee  6,07 €

      morgen versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2303+
      Manufacturer Lead Time:
      42 Wochen
      Minimum Of :
      1
      Maximum Of:
      7700
      Country Of origin:
      China
         
      • Price: 0,1658 €
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • morgen versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2303+
      Manufacturer Lead Time:
      42 Wochen
      Country Of origin:
      China
      • In Stock: 7.700 Stück
      • Price: 0,1658 €

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