Diodes IncorporatedMMBT2222ALP4-7BGP BJT
Trans GP BJT NPN 40V 0.6A 1000mW 3-Pin X2-DFN T/R
| Compliant | |
| EAR99 | |
| Active | |
| MMBT2222ALP4-7B | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 75 | |
| 40 | |
| 6 | |
| 1.2@15mA@150mA|2@50mA@500mA | |
| 0.3@15mA@150mA|1@50mA@500mA | |
| 0.6 | |
| 35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|40@500mA@10V|50@150mA@1V | |
| 1000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.35(Max) |
| Verpackungsbreite | 1 |
| Verpackungslänge | 0.6 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | X2-DFN |
| 3 | |
| Leitungsform | No Lead |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN MMBT2222ALP4-7B GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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