Meist Gekauft
onsemiMMBT2222ALT1GGP BJT
Trans GP BJT NPN 40V 0.6A 300mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 75 | |
| 40 | |
| 6 | |
| -55 to 150 | |
| 2@50mA@500mA|1.2@15mA@150mA | |
| 1@50mA@500mA|0.3@15mA@150mA | |
| 0.6 | |
| 10 | |
| 50@150mA@1V|40@500mA@10V|100@150mA@10V|75@10mA@10V|50@1mA@10V|35@0.1mA@10V | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.94 mm |
| Verpackungsbreite | 1.3 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the NPN MMBT2222ALT1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.