Diodes IncorporatedMMBT3904FA-7BGP BJT
Trans GP BJT NPN 40V 0.2A 435mW 3-Pin X2-DFN T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 60 | |
| 40 | |
| 6 | |
| 0.85@1mA@10mA|0.95@5mA@50mA | |
| 0.2@1mA@10mA|0.3@5mA@50mA | |
| 0.2 | |
| 40@100uA@1V|70@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V | |
| 435 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.37 |
| Verpackungsbreite | 0.8 |
| Verpackungslänge | 0.6 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | X2-DFN |
| 3 | |
| Leitungsform | No Lead |
Implement this versatile NPN MMBT3904FA-7B GP BJT from Diodes Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 435 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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