| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 60 | |
| 40 | |
| 6 | |
| -65 to 150 | |
| 0.85@1mA@10mA|0.95@5mA@50mA | |
| 0.2@1mA@10mA|0.3@5mA@50mA | |
| 0.2 | |
| 40@0.1mA@1V|70@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V | |
| 300 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75 mm |
| Verpackungsbreite | 0.8 mm |
| Verpackungslänge | 1.6 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-416 |
| 3 | |
| Leitungsform | Gull-wing |
Compared to other transistors, the NPN MMBT3904TT1G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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