Meist Gesucht
onsemiMMBT3904WT1GGP BJT
Trans GP BJT NPN 40V 0.2A 150mW 3-Pin SC-70 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 60 | |
| 40 | |
| 6 | |
| -55 to 150 | |
| 0.85@1mA@10mA|0.95@5mA@50mA | |
| 0.2@1mA@10mA|0.3@5mA@50mA | |
| 0.2 | |
| 40@0.1mA@1V|70@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V | |
| 150 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.85 mm |
| Verpackungsbreite | 1.24 mm |
| Verpackungslänge | 2 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-70 |
| 3 | |
| Leitungsform | Gull-wing |
The NPN MMBT3904WT1G general purpose bipolar junction transistor, developed by ON Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.