onsemiMMBT5087LT1GGP BJT

Trans GP BJT PNP 50V 0.05A 300mW 3-Pin SOT-23 T/R

Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the PNP MMBT5087LT1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 3 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 3 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

Import TariffMay apply to this part

Auf Lager: 213.000 Stück

Regional Inventory: 189.000

    Total69,90 €Price for 3000

    189.000 auf Lager: morgen versandbereit

    • (3000)

      morgen versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2525+
      Manufacturer Lead Time:
      41 Wochen
      Country Of origin:
      China
      • In Stock: 189.000 Stück
      • Price: 0,0233 €
    • (3000)

      Versand in vsl. 2 Tagen

      Ships from:
      Niederlande
      Date Code:
      2520+
      Manufacturer Lead Time:
      41 Wochen
      Country Of origin:
      China
      • In Stock: 24.000 Stück
      • Price: 0,0255 €

    KI-Systeme in der Medizin

    Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.